T171-200/250/320A Thyristor SCR

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Phase Control Stud Thyristor (T171)

Optimum power handling Low on-state and switching losses Designed for traction and industrial applications

Mean on-state current	I_TAV	200A / 250A / 320A
Repetitive peak off-state voltage	V_DRM	1000÷1800 V
Repetitive peak reverse voltage	V_RRM	1000÷1800 V
Turn-off time	t_q	125μs
V_DRM, V_RRM, V		1000	1200	1400	1600	1800
Voltage code		10	12	14	16	18
T_j,^oC		-60÷125

Part Numbering Guide

T	171	200	18	A2	X2	N
1	2	3	4	5	6	7

1. High Frequency Inverter Grade Thyristor
2. Design version
3. Mean on-state current, A
4. Voltage code
5. Critical rate of rise of off-state voltage
6. Group of turn-off time (dvD/dt=50 V/μs)
7. Ambient conditions: N – normal; T – tropical

Maximum Allowable Ratings

Symbols and parameters		Units	Values			Test conditions
On-State
			200A	250A	320A
I_TAV	Mean on-state current	A	200 280	250 295	320 355	T_c= 103 ^oC; T_c= 85 ^oC; 180° half-sine wave; 50 Hz
I_TRMS	RMS on-state current	A	314	393	502	Tc= 103 ^oC; 180° half-sine wave; 50 Hz
I_TSM	Surge on-state current	kA	7.5 8.6	9.0 10.4	10.0 12.0	T_j=T_{j max} T_j=25 ^oC	180° half-sine wave; 50 Hz (t_p=10 ms); single pulse; V_D=V_R=0 V; Gate pulse:I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
			8.0 9.2	10.0 11.5	11.0 13.0	T_j=T_{j max} T_j=25 ^oC	180° half-sine wave; 60 Hz (t_p=8.3 ms); single pulse; V_D=V_R=0 V; Gate pulse:I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
I²t	Safety factor	A²s.10³	280 365	405 540	500 720	T_j=T_{j max} T^j=25 ^oC	180° half-sine wave; 50 Hz (t_p=10 ms); single pulse; V_D=V_R=0 V; Gate pulse:I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
			265 350	415 545	500 700	T_j=T_{j max} T_j=25 ^oC	180° half-sine wave; 60 Hz (t_p=8.3 ms); single pulse; V_D=V_R=0 V; Gate pulse:I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
Blocking
V_DRM, V_RRM	Repetitive peak off-state and Repetitive peak reverse voltages	V	1000÷1800			T_{j min}< T_j<T_{j max}; 180° half-sine wave; 50 Hz; Gate open
V_DSM, V_RSM	Non-repetitive peak off-state and Non-repetitive peak reverse voltages	V	1100÷1900			T_{j min}< T_j<T_{j max}; 180° half-sine wave; 50 Hz;single pulse; Gate open
V_D, V_R	Direct off-state and Direct reverse voltages	V	0.75.V_DRM 0.75.V_RRM			T_j=T_{j max}; Gate open
Triggering
I_FGM	Peak forward gate current	A	6			T_j=T_{j max}
V_RGM	Peak reverse gate voltage	V	5
P_G	Gate power dissipation	W	3			T_j=T_{j max} for DC gate current
Switching
(di_T/dt)_crit	Critical rate of rise of on-state current non-repetitive (f=1 Hz)	A/μs	320			T_j=T_{j max}; V_D=0.67.V_DRM; I_TM=2 I_TAV; Gate pulse: I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
Thermal
T_stg	Storage temperature	^oC	-60÷125
T_j	Operating junction temperature	^oC	-60÷125
Mechanical
M	Tightening torque	Nm	25÷35
a	Acceleration	m/s²	100

Characteristics

Symbols and parameters		Units	Values			Conditions
On-State
			200A	250A	320A
V_TM	Peak on-state voltage, max	V	1.75	1.75	1.60	T_j=25 ^oC; I_TM= 393 A
V_T(TO)	On-state threshold voltage, max	V	1.00	1.00	0.95	T_j=T_{j max}; 0.5 π I_TAV < I_T< 1.5 π I_TAV
r_T	On-state slope resistance, max	mΩ	1.120	0.950	0.510	T_j=T_{j max}; 0.5 π I_TAV < I_T< 1.5 π I_TAV
I_L	Latching current, max	mA	700	700	700	T_j=25 ^oC; V_D=12 V; Gate pulse: I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
I_H	Holding current, max	mA	300	300	300	T_j=25 ^oC; V_D=12 V; Gate open
Blocking
I_DRM, I_RRM	Repetitive peak off-state and Repetitive peak reverse currents, max	mA	70	70	70	T_j=T_{j max}; V_D=V_DRM; V_R=V_RRM
(dv_D/dt)_crit	Critical rate of rise of off-state voltage¹⁾, min	V/μs	1000	1000	1000	T_j=T_{j max}; V_D=0.67.V_DRM; Gate open
TRIGGERING
V_GT	Gate trigger direct voltage, max	V	4.00 2.50 2.00			T_j= T_{j min} T_j=25 ^oC T_j= T_{j max}	V_D=12 V; I_D=3 A; Direct gate current
I_GT	Gate trigger direct current, max	mA	400 250 200			T_j= T_{j min} T_j= 25 ^oC T_j= T_{j max}	V_D=12 V; I_D=3 A; Direct gate current
V_GD	Gate non-trigger direct voltage, min	V	0.25			T_j=T_{j max}; V_D=0.67.V_DRM; Direct gate current
I_GD	Gate non-trigger direct current, min	mA	10.00			T_j=T_{j max}; V_D=0.67.V_DRM; Direct gate current
Switching
t_gd	Delay time	μs	2.00			T_j=25 ^oC; V_D=0.4.V_DRM; I_TM=I_TAV; Gate pulse: I_G=I_FGM; V_G=20 V; t_GP=500 μs; di_G/dt=1 A/μs
t_q	Turn-off time²⁾, max	μs	125			dv_D/dt=50 V/μs; T_j=T_{j max}; I_TM= I_TAV; di_R/dt= 10 A/μs; V_R=100V; V_D= 0.67.V_DRM;
Thermal
Rthjc	Thermal resistance, junction to case, max	^oC/W	0.0800			Direct current
Mechanical
w	Weight, typ	g	440
D_s	Surface creepage distance	mm (inch)	12.4 (4.882)
D_a	Air strike distance	mm (inch)	12.4 (4.882)

Notes

1) Critical rate of rise of off-state voltage

Symbol of group	A2
(dv_D/dt)_crit, V/μs	1000

2)Turn-off time (dvD/dt=50 V/μs)

Symbol of group	X2
t_q, μs	125

Overall Dimensions

Type of screw	W	H
Metric Screw Type B	M24x1.5	18
Metric Screw Type A(upon request)	M20x1.5	18

Polarity	Example of code designation	Reference designation	Colors
			Anode	Cathode	Gate
Anode to stud	T171-200-18 / T171-250-18 / T171-320-18		-	Red tube	White

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